D2016UK document number 3143 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. p d power dissipation bv dss drain ? source breakdown voltage * bv gss gate ? source breakdown voltage * i d(sat) drain current * t stg storage temperature t j maximum operating junction temperature 117w 65v 20v 6a ?65 to 150c 200c mechanical data f a c b ( 2 pls ) k 2 3 e 1 g ( 4 pls ) 5 4 d n m ji h gold metallised multi-purpose silicon dmos rf fet 30w ? 28v ? 1ghz push?pull features simplified amplifier design suitable for broad band applications very low c rss simple bias circuits low noise high gain ? 10 db minimum dk pin 1 source (common) pin 3 drain 2 pin 5 gate 1 pin 2 drain 1 pin 4 gate 2 absolute maximum ratings (t case = 25 c unless otherwise stated) applications hf/vhf/uhf communications from 1mhz to 2 ghz metal gate rf silicon fet tetrafet dim mm tol. inches tol. a 6.45 0.13 0.254 0.005 b 1.65r 0.13 0.065r 0.005 c45 5 45 5 d 16.51 0.76 0.650 0.03 e 6.47 0.13 0.255 0.005 f 18.41 0.13 0.725 0.005 g 1.52 0.13 0.060 0.005 h 4.82 0.25 0.190 0.010 i 24.76 0.13 0.975 0.005 j 1.52 0.13 0.060 0.005 k 0.81r 0.13 0.032r 0.005 m 0.13 0.02 0.005 0.001 n 2.16 0.13 0.085 0.005 * per side rohs compliant
parameter test conditions min. typ. max. unit D2016UK document number 3143 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. 65 6 1 17 1.08 10 40 20:1 72 36 3 v gs = 0 i d = 10ma v ds = 28v v gs = 0 v gs = 20v v ds = 0 i d = 10ma v ds = v gs v ds = 10v i d = 1.2a p o = 30w v ds = 28v i dq = 1.2a f = 1ghz v ds = 0 v gs = ? 5v f = 1mhz v ds = 28v v gs = 0 f = 1mhz v ds = 28v v gs = 0 f = 1mhz v ma a v s db % ? pf pf pf electrical characteristics (t case = 25 c unless otherwise stated) drain?source bv dss breakdown voltage zero gate voltage i dss drain current i gss gate leakage current v gs(th) gate threshold voltage * g fs forward transconductance * g ps common source power gain drain efficiency vswr load mismatch tolerance c iss input capacitance c oss output capacitance c rss reverse transfer capacitance hazardous material warning the ceramic portion of the device between leads and metal flange is beryllium oxide. beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. these devices must never be thrown away with general industrial or domestic waste. r thj?case thermal resistance junction ? case max. 1.5c / w thermal data * pulse test: pulse duration = 300 s , duty cycle 2% total device per side per side
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